strip inductors based on FeN films

Planar strip inductors consisting of two Fe-N films enclosing a conducting film made of Cu, were fabricated on oxidized Si substrates. The inductors were 1 mm long, 2 to 100 µm wide, with layers of thickness ∼ 0.1 µm for the magnetic films and ∼ 0.5 µm for the conductor. The soft (H c = 4 − 8 Oe) magnetic layers were biased during impedance measurement by applying an external field along the strip length thereby facilitating the transverse susceptibility configuration. Biased strips exhibited 70 to 100% inductance enhancement at 1 GHz with quality factors Q=4.5 to 3, respectively. The magnetic contribution to the total flux in the narrow devices was less than predicted theoretically, which was attributed to hardening of the magnetic material at the edges of the strip, where the deposition was close to 60 • incidence. Test films were fabricated on tilted substrates and found to develop a very high anisotropy (up to 1 kOe) for deposition angles larger than 30 •. Optimizing the flux closure at the strip edges and using thicker conductor layers is essential for further improving the performance of sandwich strip inductors.